FDT86102LZ

Symbol Micros: TFDT86102LZ

122827

TFDT86102LZ

Contractor Symbol:

Case : SOT223-4

Datasheet

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Trans MOSFET N-CH 100V 6.6A

Parameters

Open channel resistance:	46mOhm
Max. drain current:	6,6A
Max. power loss:	2,2W
Case:	SOT223-4
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FDT86102LZ RoHS Case style: SOT223-4 t/r Datasheet

In stock:

15 pcs.

Quantity of pcs.	1+	2+	20+	100+	300+
Net price (EUR)	2,0503	1,8215	1,4712	1,3918	1,3661

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Packaging:
2/20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	46mOhm
Max. drain current:	6,6A
Max. power loss:	2,2W
Case:	SOT223-4
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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