FGA15N120ANTDTU_F109

Symbol Micros: TFGA15N120antdu

91123

TFGA15N120antdu

Contractor Symbol:

Case : TO 3P

Datasheet

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IGBT 1200V 30A 186W

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Parameters

Gate charge:	180nC
Max. dissipated power:	186W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,5V ~ 8,5V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	180nC
Max. dissipated power:	186W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,5V ~ 8,5V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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