FGA60N60UFDTU

Symbol Micros: TFGA60N60ufdtu

91129

TFGA60N60ufdtu

Contractor Symbol:

Case : TO 3P

Datasheet

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IGBT 600V 120A 298W

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Parameters

Gate charge:	188nC
Max. dissipated power:	298W
Max. collector current:	120A
Max collector current (impulse):	180A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO-3P
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGA60N60UFDTU RoHS Case style: TO 3P  

In stock:

2 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	6,4276	5,9192	5,6086	5,4522	5,3555

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Gate charge:	188nC
Max. dissipated power:	298W
Max. collector current:	120A
Max collector current (impulse):	180A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO-3P
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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