FGA60N65SMD

Symbol Micros: TFGA60N65smd

91130

TFGA60N65smd

Contractor Symbol:

Case : TO 3P

Datasheet

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IGBT 650V 120A 600W

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Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max. collector current:	120A
Max collector current (impulse):	180A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR

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Estimated date:
2025-03-07

Quantity of pcs.: 150

• Parameters

Gate charge:	284nC
Max. dissipated power:	600W
Max. collector current:	120A
Max collector current (impulse):	180A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	650V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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