FGA60N65SMD

Symbol Micros: TFGA60N65smd
Contractor Symbol:
Case :  
IGBT 650V 120A 600W
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Parameters
Gate charge: 284nC
Max. dissipated power: 600W
Max. collector current: 120A
Max collector current (impulse): 180A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO 3P
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: FGA60N65SMD RoHS Case style: TO 3P  
In stock:
23 pcs.
Quantity of pcs. 1+ 5+ 30+ 60+ 180+
Net price (EUR) 4,3272 3,7176 3,4392 3,3840 3,3288
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Packaging:
30
Manufacturer:: ON-Semicoductor Manufacturer part number: FGA60N65SMD Case style: TO 3P  
External warehouse:
60 pcs.
Quantity of pcs. 30+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 4,5090
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FGA60N65SMD Case style: TO 3P  
External warehouse:
843 pcs.
Quantity of pcs. 450+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 4,5090
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Packaging:
450
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 284nC
Max. dissipated power: 600W
Max. collector current: 120A
Max collector current (impulse): 180A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO 3P
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 650V
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT