FGAF40N60SMD
Symbol Micros:
TFGAF40N60smd
Case : TO 3Piso
IGBT 600V 80A 115W
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 119nC |
Max. dissipated power: | 115W |
Max. collector current: | 80A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 3,5V ~ 6,0V |
Case: | TO-3Piso |
Manufacturer: | ON SEMICONDUCTOR |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FGAF40N60SMD RoHS
Case style: TO 3Piso
Datasheet
In stock:
22 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 5,3751 | 4,5203 | 4,0065 | 3,7508 | 3,6080 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FGAF40N60SMD
Case style: TO 3Piso
External warehouse:
330 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 3,6080 |
Gate charge: | 119nC |
Max. dissipated power: | 115W |
Max. collector current: | 80A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 3,5V ~ 6,0V |
Case: | TO-3Piso |
Manufacturer: | ON SEMICONDUCTOR |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -55°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols