FGD3245G2-F085C

Symbol Micros: TFGD3245G2-F085C

399865

TFGD3245G2-F085C

Contractor Symbol:

Case : DPAK-3

Datasheet

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IGBT Modules 320 mJ, 450 V, N−Channel Ignition IGBT; 23A; 150W; 120Ohm; -55°C~175°C;

Parameters

Gate charge:	23nC
Max. dissipated power:	150W
Max. collector current:	23A
Forvard volatge [Vgeth]:	1,3V ~ 2,2V
Case:	DPAK-3
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	480V

All parameters

         

 

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• Parameters

Gate charge:	23nC
Max. dissipated power:	150W
Max. collector current:	23A
Forvard volatge [Vgeth]:	1,3V ~ 2,2V
Case:	DPAK-3
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	480V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	14V
Mounting:	SMD

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