FGH40N60SFDTU

Symbol Micros: TFGH40N60sfdtu
Contractor Symbol:
Case :  
IGBT 600V 80A 290W
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Parameters
Gate charge: 120nC
Max. dissipated power: 290W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,0V ~ 6,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SFDTU RoHS Case style: TO247  
In stock:
60 pcs.
Quantity of pcs. 1+ 5+ 30+ 90+ 180+
Net price (EUR) 3,9269 3,3748 3,1195 3,0481 3,0205
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Packaging:
30/90
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SFDTU Case style: TO247  
External warehouse:
360 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 3,0205
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SFDTU Case style: TO247  
External warehouse:
150 pcs.
Quantity of pcs. 30+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 3,0205
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 120nC
Max. dissipated power: 290W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,0V ~ 6,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT