FGH40N60SMD

Symbol Micros: TFGH40N60smd
Contractor Symbol:
Case : TO247
IGBT 600V 80A 349W
Parameters
Gate charge: 119nC
Max. dissipated power: 349W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SMD RoHS Case style: TO247  
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 4,9802 4,4263 4,0906 3,9252 3,8317
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Packaging:
30
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SMD Case style: TO247  
External warehouse:
450 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,8317
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SMD-F085 Case style: TO247  
External warehouse:
210 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,8317
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 119nC
Max. dissipated power: 349W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,5V ~ 6,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT