FGH40N60SMD

Symbol Micros: TFGH40N60smd

91141

TFGH40N60smd

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 600V 80A 349W

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Parameters

Gate charge:	119nC
Max. dissipated power:	349W
Max. collector current:	80A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60SMD RoHS Case style: TO247  

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	4,8621	4,3214	3,9936	3,8321	3,7408

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	119nC
Max. dissipated power:	349W
Max. collector current:	80A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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