FGH40N60SMDF

Symbol Micros: TFGH40N60smdf

327046

TFGH40N60smdf

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT Chip N-CH; 600V; 20V; 80A; 120A; 349W; 3,5~6,0V; 119nC; -55°C~175°C; Substitute: FGH40N60SMDF-F085; FGH40N60SMDF_F085;

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Parameters

Gate charge:	119nC
Max. dissipated power:	349W
Max. collector current:	80A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	119nC
Max. dissipated power:	349W
Max. collector current:	80A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	3,5V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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