FGH40N60UFDTU

Symbol Micros: TFGH40N60ufdtu
Contractor Symbol:
Case : TO247
IGBT 600V 80A 290W
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Parameters
Gate charge: 120nC
Max. dissipated power: 290W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,0V ~ 6,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60UFDTU RoHS Case style: TO247  
In stock:
28 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 4,2422 3,7677 3,4835 3,3426 3,2627
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Packaging:
30
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60UFDTU Case style: TO247  
External warehouse:
300 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,2627
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N60UFDTU Case style: TO247  
External warehouse:
720 pcs.
Quantity of pcs. 450+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 3,2627
Add to comparison tool
Packaging:
450
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 120nC
Max. dissipated power: 290W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,0V ~ 6,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT