FGH40N65UFDTU

Symbol Micros: TFGH40N65ufdtu
Contractor Symbol:
Case : TO247
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IGBT 650V 80A 290W
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Parameters
Gate charge: 120nC
Max. dissipated power: 290W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,0V ~ 6,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N65UFDTU RoHS Case style: TO247 Datasheet
In stock:
45 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 60+
Net price (EUR) 7,6510 7,1713 6,8701 6,7149 6,6523
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Packaging:
30/60
Gate charge: 120nC
Max. dissipated power: 290W
Max. collector current: 80A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,0V ~ 6,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 650V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT

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