FGH40N65UFDTU

Symbol Micros: TFGH40N65ufdtu

113238

TFGH40N65ufdtu

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 650V 80A 290W

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Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max. collector current:	80A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40N65UFDTU RoHS Case style: TO247 Datasheet

In stock:

45 pcs.

Quantity of pcs.	1+	3+	10+	30+	60+
Net price (EUR)	7,6921	7,2099	6,9071	6,7510	6,6881

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Packaging:
30/60 Quantity (multiple: 1)

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• Parameters

Gate charge:	120nC
Max. dissipated power:	290W
Max. collector current:	80A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	4,0V ~ 6,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	650V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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