FGH40T120SMD-F155

Symbol Micros: TFGH40T120smd-f155

293186

TFGH40T120smd-f155

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247

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Write sales // micros.com.pl or call: +48 785 054 437

Parameters

Gate charge:	370nC
Max. dissipated power:	555W
Max. collector current:	80A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	4,9V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40T120SMD-F155 Case style: TO247  

External warehouse:

1170 pcs.

Quantity of pcs.	450+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	4,6649

Add inquiry (RFQ)

Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH40T120SMD-F155 Case style: TO247  

External warehouse:

420 pcs.

Quantity of pcs.	30+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	4,8038

Add to comparison tool Add inquiry (RFQ)

Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	370nC
Max. dissipated power:	555W
Max. collector current:	80A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	4,9V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	25V
Mounting:	THT

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