FGH75T65UPD TO247AB

Symbol Micros: TFGH75T65upd

86491

TFGH75T65upd

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT ; 650V; 20V; 150A; 225A; 375W; 4,0~7,5V; 578nC; -55°C~175°C; Replacement: FGH75T65UPD-F085; FGH75T65UPD-F155;

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Parameters

Gate charge:	578nC
Max. dissipated power:	375W
Max. collector current:	150A
Max collector current (impulse):	225A
Forvard volatge [Vgeth]:	4,0V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FGH75T65UPD RoHS Case style: TO247  

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,3090	4,8874	4,6288	4,4983	4,4238

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	578nC
Max. dissipated power:	375W
Max. collector current:	150A
Max collector current (impulse):	225A
Forvard volatge [Vgeth]:	4,0V ~ 7,5V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	650V
Operating temperature (range):	-55°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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