FGH75T65UPD TO247AB

Symbol Micros: TFGH75T65upd
Contractor Symbol:
Case : TO247
Trans IGBT ; 650V; 20V; 150A; 225A; 375W; 4,0~7,5V; 578nC; -55°C~175°C; Replacement: FGH75T65UPD-F085; FGH75T65UPD-F155;
Parameters
Gate charge: 578nC
Max. dissipated power: 375W
Max. collector current: 150A
Max collector current (impulse): 225A
Forvard volatge [Vgeth]: 4,0V ~ 7,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH75T65UPD RoHS Case style: TO247  
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,5056 5,0684 4,8002 4,6649 4,5876
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Packaging:
30
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH75T65UPD Case style: TO247  
External warehouse:
420 pcs.
Quantity of pcs. 60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 4,5876
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FGH75T65UPD Case style: TO247  
External warehouse:
2250 pcs.
Quantity of pcs. 450+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 4,5876
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Packaging:
450
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 578nC
Max. dissipated power: 375W
Max. collector current: 150A
Max collector current (impulse): 225A
Forvard volatge [Vgeth]: 4,0V ~ 7,5V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 650V
Operating temperature (range): -55°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT