FGL40N120ANDTU

Symbol Micros: TFGL40N120andtu

91148

TFGL40N120andtu

Contractor Symbol:

Case : TO264

Datasheet

Technical drawing

IGBT 1200V 64A 500W

Parameters

Gate charge:	330nC
Max. dissipated power:	500W
Max. collector current:	64A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	3,5V ~ 7,5V
Case:	TO264
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	330nC
Max. dissipated power:	500W
Max. collector current:	64A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	3,5V ~ 7,5V
Case:	TO264
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	25V
Mounting:	THT

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