FQA11N90C_F109

Symbol Micros: TFQA11n90c_f109

57933

TFQA11n90c_f109

Contractor Symbol:

Case : TO 3P

Datasheet

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N-MOSFET 11A 900V 300W 1.1Ω

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Parameters

Open channel resistance:	1,1Ohm
Max. drain current:	11A
Max. power loss:	300W
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	1,1Ohm
Max. drain current:	11A
Max. power loss:	300W
Case:	TO 3P
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	900V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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