FQB33N10TM

Symbol Micros: TFQB33n10tm

116120

TFQB33n10tm

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 100V; 25V; 52mOhm; 33A; 127W; -55°C ~ 175°C;

Parameters

Open channel resistance:	52mOhm
Max. drain current:	33A
Max. power loss:	127W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FQB33N10TM RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,3574	1,0374	0,8575	0,7523	0,7149

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	52mOhm
Max. drain current:	33A
Max. power loss:	127W
Case:	TO263 (D2PAK)
Manufacturer:	Fairchild
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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