FQB34N20LTM

Symbol Micros: TFQB34n20ltm
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 200V; 20V; 80mOhm; 31A; 180W; -55°C ~ 150°C;
Parameters
Open channel resistance: 80mOhm
Max. drain current: 31A
Max. power loss: 180W
Case: TO263 (D2PAK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Fairchild Manufacturer part number: FQB34N20LTM RoHS Case style: TO263t/r  
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 300+
Net price (EUR) 1,6790 1,2447 1,0882 1,0111 0,9878
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Packaging:
20
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB34N20LTM Case style: TO263 (D2PAK)  
External warehouse:
7200 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,5305
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Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB34N20LTM Case style: TO263 (D2PAK)  
External warehouse:
3200 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,4536
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 80mOhm
Max. drain current: 31A
Max. power loss: 180W
Case: TO263 (D2PAK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD