FQB34P10TM
Symbol Micros:
TFQB34p10tm
Case : TO263 (D2PAK)
Transistor P-Channel MOSFET; 100V; 25V; 60mOhm; 33,5A; 155W; -55°C ~ 175°C;
Parameters
Open channel resistance: | 60mOhm |
Max. drain current: | 33,5A |
Max. power loss: | 155W |
Case: | TO263 (D2PAK) |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 100V |
Transistor type: | P-MOSFET |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FQB34P10TM RoHS
Case style: TO263 (D2PAK)
Datasheet
In stock:
20 pcs.
Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 3,1454 | 2,4570 | 2,1965 | 2,0603 | 2,0292 |
Manufacturer:: ON-Semicoductor
Manufacturer part number: FQB34P10TM
Case style: TO263 (D2PAK)
External warehouse:
12000 pcs.
Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 2,0292 |
Manufacturer:: Fairchild
Manufacturer part number: FQB34P10TM
Case style: TO263 (D2PAK)
External warehouse:
2400 pcs.
Quantity of pcs. | 800+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 2,0292 |
Open channel resistance: | 60mOhm |
Max. drain current: | 33,5A |
Max. power loss: | 155W |
Case: | TO263 (D2PAK) |
Manufacturer: | ON SEMICONDUCTOR |
Max. drain-source voltage: | 100V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 25V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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