FQB34P10TM

Symbol Micros: TFQB34p10tm
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Case : TO263 (D2PAK)
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Transistor P-Channel MOSFET; 100V; 25V; 60mOhm; 33,5A; 155W; -55°C ~ 175°C;
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Parameters
Open channel resistance: 60mOhm
Max. drain current: 33,5A
Max. power loss: 155W
Case: TO263 (D2PAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQB34P10TM RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 3,0767 2,4034 2,1486 2,0153 1,9849
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Packaging:
20
Open channel resistance: 60mOhm
Max. drain current: 33,5A
Max. power loss: 155W
Case: TO263 (D2PAK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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