FQD11P06TM

Symbol Micros: TFQD11p06tm
Contractor Symbol:
Case : TO252 (DPACK)
P-MOSFET 9.4A 60V 38W 0.185Ω
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Parameters
Open channel resistance: 185mOhm
Max. drain current: 9,4A
Max. power loss: 38W
Case: TO252 (DPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: TECH PUBLIC Manufacturer part number: TPFQD11P06TM RoHS Case style: TO252 (DPACK) t/r  
In stock:
500 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9161 0,6076 0,5040 0,4545 0,4357
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Packaging:
500
Manufacturer:: ON-Semicoductor Manufacturer part number: FQD11P06TM Case style: TO252 (DPACK)  
External warehouse:
2500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4423
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 185mOhm
Max. drain current: 9,4A
Max. power loss: 38W
Case: TO252 (DPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD