FQD11P06TM

Symbol Micros: TFQD11p06tm

109615

TFQD11p06tm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

P-MOSFET 9.4A 60V 38W 0.185Ω

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Parameters

Open channel resistance:	185mOhm
Max. drain current:	9,4A
Max. power loss:	38W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: TECH PUBLIC Manufacturer part number: TPFQD11P06TM RoHS Case style: TO252 (DPACK) t/r  

In stock:

500 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	0,8625	0,5734	0,4732	0,4266	0,4103

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	185mOhm
Max. drain current:	9,4A
Max. power loss:	38W
Case:	TO252 (DPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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