FQD12N20LTM

Symbol Micros: TFQD12n20ltm
Contractor Symbol:
Case : TO252 (DPACK)
N-MOSFET 9A 200V 55W 0.28Ω
Parameters
Open channel resistance: 320mOhm
Max. drain current: 9A
Max. power loss: 55W
Case: TO252 (DPACK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQD12N20LTM RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
35 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,9761 0,7169 0,5745 0,4927 0,4647
Add to comparison tool
Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: FQD12N20LTM Case style: TO252 (DPACK)  
External warehouse:
10000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4647
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Fairchild Manufacturer part number: FQD12N20LTM Case style: TO252 (DPACK)  
External warehouse:
165000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4647
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 320mOhm
Max. drain current: 9A
Max. power loss: 55W
Case: TO252 (DPACK)
Manufacturer: Fairchild
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD