FQD1N60CTM

Symbol Micros: TFQD1n60ctm

108839

TFQD1n60ctm

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-Channel 600 V 11.5 Ohm Surface Mount Mosfet

Parameters

Open channel resistance:	3,4Ohm
Max. drain current:	1A
Max. power loss:	28W
Case:	TO252/3 (DPAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FQD1N60CTM RoHS Case style: TO252/3 (DPAK)  

In stock:

85 pcs.

Quantity of pcs.	2+	15+	100+	300+	1000+
Net price (EUR)	0,5568	0,3096	0,2448	0,2299	0,2227

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3,4Ohm
Max. drain current:	1A
Max. power loss:	28W
Case:	TO252/3 (DPAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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