FQD1N80TM

Symbol Micros: TFQD1n80tm

57939

TFQD1n80tm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C;

Parameters

Open channel resistance:	20Ohm
Max. drain current:	1A
Max. power loss:	45W
Case:	TO252 (DPACK)
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FQD1N80TM RoHS Case style: TO252 (DPACK) t/r  

In stock:

75 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,5698	0,3573	0,2966	0,2639	0,2475

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD1N80TM Case style: TO252 (DPACK)  

External warehouse:

10000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2883

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	20Ohm
Max. drain current:	1A
Max. power loss:	45W
Case:	TO252 (DPACK)
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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