FQD2N80TM

Symbol Micros: TFQD2n80tm

57940

TFQD2n80tm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 800V; 30V; 6,3Ohm; 1,8A; 50W; -55°C ~ 150°C;

Parameters

Open channel resistance:	6,3Ohm
Max. drain current:	1,8A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Fairchild Manufacturer part number: FQD2N80TM RoHS Case style: TO252 (DPACK) t/r  

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,5908	0,3713	0,3082	0,2732	0,2569

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	6,3Ohm
Max. drain current:	1,8A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	Fairchild
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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