FQD8P10TM

Symbol Micros: TFQD8p10tm

109622

TFQD8p10tm

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

Technical drawing Add to favourites

P-MOSFET 6.6A 100V 44W 0.53Ω

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Parameters

Open channel resistance:	530mOhm
Max. drain current:	6,6A
Max. power loss:	44W
Case:	TO252 (DPAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

32 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,7394	0,4636	0,3852	0,3424	0,3210

Add to comparison tool Add inquiry (RFQ)

Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM Case style: TO252 (DPACK)  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3210

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM Case style: TO252 (DPACK)  

External warehouse:

17500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3210

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: FQD8P10TM-F085 Case style: TO252 (DPACK)  

External warehouse:

17500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,5405

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	530mOhm
Max. drain current:	6,6A
Max. power loss:	44W
Case:	TO252 (DPAK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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