FQP2N60C

Symbol Micros: TFQP2n60c
Contractor Symbol:
Case : TO220
N-NOSFET 2A 600V 54W 4.7Ω
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Parameters
Open channel resistance: 4,7Ohm
Max. drain current: 2A
Max. power loss: 54W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: ON-Semicoductor Manufacturer part number: FQP2N60C RoHS Case style: TO220  
In stock:
50 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,9019 0,5678 0,4440 0,4183 0,3926
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Packaging:
50/100
Open channel resistance: 4,7Ohm
Max. drain current: 2A
Max. power loss: 54W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT