FQP2N60C

Symbol Micros: TFQP2n60c

77956

TFQP2n60c

Contractor Symbol:

Case : TO220

Datasheet

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N-NOSFET 2A 600V 54W 4.7Ω

Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	2A
Max. power loss:	54W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQP2N60C RoHS Case style: TO220  

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,9014	0,5675	0,4437	0,4180	0,3923

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	2A
Max. power loss:	54W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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