FQPF2N60C

Symbol Micros: TFQPF2n60c
Contractor Symbol:
Case : TO220iso
Transistor N-Channel MOSFET; 600V; 30V; 4,7Ohm; 2A; 23W; -55°C ~ 150°C;
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Parameters
Open channel resistance: 4,7Ohm
Max. drain current: 2A
Max. power loss: 23W
Case: TO220iso
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Fairchild Manufacturer part number: FQPF2N60C RoHS Case style: TO220iso Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5127 1,1557 0,9560 0,8386 0,7963
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Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: FQPF2N60C RoHS Case style: TO220iso  
In stock:
6 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5127 1,1557 0,9560 0,8386 0,7963
Add to comparison tool
Packaging:
50
Manufacturer:: ON-Semicoductor Manufacturer part number: FQPF2N60C Case style: TO220iso  
External warehouse:
14650 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7963
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 4,7Ohm
Max. drain current: 2A
Max. power loss: 23W
Case: TO220iso
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT