FQU11P06TU

Symbol Micros: TFQU11p06tu

57957

TFQU11p06tu

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

Technical drawing Add to favourites

P-MOSFET 9.4A 60V 38W 0.185Ω

Parameters

Open channel resistance:	185mOhm
Max. drain current:	9,4A
Max. power loss:	38W
Case:	TO251 (IPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: FQU11P06TU RoHS Case style: TO251 (IPACK)  

In stock:

10 pcs.

Quantity of pcs.	1+	5+	20+	70+	280+
Net price (EUR)	0,9574	0,6328	0,5231	0,4787	0,4554

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Packaging:
70 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	185mOhm
Max. drain current:	9,4A
Max. power loss:	38W
Case:	TO251 (IPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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