G110N06T Goford Semiconductor

Symbol Micros: TG110N06T

392111

TG110N06T

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Datasheet

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N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	8,4mOhm
Max. drain current:	110A
Max. power loss:	160W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	8,4mOhm
Max. drain current:	110A
Max. power loss:	160W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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