G12P10K Goford Semiconductor

Symbol Micros: TG12P10K

392114

TG12P10K

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P100V,RD(MAX)<200M@-10V,RD(MAX)< Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	250mOhm
Max. drain current:	12A
Max. power loss:	57W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	250mOhm
Max. drain current:	12A
Max. power loss:	57W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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