G45P02D3 Goford Semiconductor

Symbol Micros: TG45P02D3

392139

TG45P02D3

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Datasheet

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P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)< Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	10mOhm
Max. drain current:	45A
Max. power loss:	29W
Case:	DFN08(3x3)
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	10mOhm
Max. drain current:	45A
Max. power loss:	29W
Case:	DFN08(3x3)
Manufacturer:	GOFORD
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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