GAN063-650WSAQ
Symbol Micros:
TGAN063-650WSAQ
Case : TO247
Trans MOSFET N-CH GaN 650V 34.5A 3-Pin(3+Tab) TO-247
Parameters
| Open channel resistance: | 120mOhm |
| Max. drain current: | 34,5A |
| Max. power loss: | 143W |
| Case: | TO247 |
| Manufacturer: | NXP |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
Manufacturer:: NXP
Manufacturer part number: GAN063-650WSAQ RoHS
Case style: TO247
Datasheet
In stock:
5 pcs.
| Quantity of pcs. | 1+ | 5+ | 10+ | 20+ | 40+ |
|---|---|---|---|---|---|
| Net price (EUR) | 17,3108 | 14,3241 | 13,5768 | 13,0327 | 12,6357 |
Manufacturer:: Nexperia
Manufacturer part number: GAN063-650WSAQ
Case style: TO247
External warehouse:
300 pcs.
| Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 12,6400 |
Manufacturer:: Nexperia
Manufacturer part number: GAN063-650WSAQ
Case style: TO247
External warehouse:
260 pcs.
| Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 12,6357 |
| Open channel resistance: | 120mOhm |
| Max. drain current: | 34,5A |
| Max. power loss: | 143W |
| Case: | TO247 |
| Manufacturer: | NXP |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | THT |
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