GC11N65K Goford Semiconductor

Symbol Micros: TGC11N65K

392159

TGC11N65K

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Datasheet

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N650V,RD(MAX)<360M@10V,VTH2.5V~4 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	360mOhm
Max. drain current:	11A
Max. power loss:	78W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	360mOhm
Max. drain current:	11A
Max. power loss:	78W
Case:	TO-252
Manufacturer:	GOFORD
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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