GT52N10D5 Goford Semiconductor

Symbol Micros: TGT52N10D5

392191

TGT52N10D5

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Datasheet

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N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	9,5mOhm
Max. drain current:	71A
Max. power loss:	100W
Case:	DFN08(5x6)
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	9,5mOhm
Max. drain current:	71A
Max. power loss:	100W
Case:	DFN08(5x6)
Manufacturer:	GOFORD
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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