HGTG10N120BND

Symbol Micros: THGTG10n120bnd

109354

THGTG10n120bnd

Contractor Symbol:

Case : TO247

Datasheet

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35A; 1200V; 298W; IGBT w/ Diode

Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max. collector current:	35A
Max collector current (impulse):	80A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG10N120BND Case style: TO247  

External warehouse:

449 pcs.

Quantity of pcs.	60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,0919

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max. collector current:	35A
Max collector current (impulse):	80A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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