HGTG12N60A4D

Symbol Micros: THGTG12n60a4d

20751

THGTG12n60a4d

Contractor Symbol:

Case : TO247

Datasheet

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54A; 600V; 167W; IGBT w/ Diode

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Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max. collector current:	54A
Max collector current (impulse):	96A
Forvard volatge [Vgeth]:	5,6V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG12N60A4D RoHS Case style: TO247  

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,1048	4,6999	4,4514	4,3249	4,2536

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Packaging:
30 Quantity (multiple: 1)

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Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG12N60A4D RoHS Case style: TO247  

In stock:

1 pcs.

Quantity of pcs.	1+	3+	9+	30+	93+
Net price (EUR)	6,2527	5,3026	4,7597	4,4261	4,2536

Add to comparison tool Add inquiry (RFQ)

Packaging:
3 Quantity (multiple: 1)

- +

• Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max. collector current:	54A
Max collector current (impulse):	96A
Forvard volatge [Vgeth]:	5,6V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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