HGTG12N60C3D

Symbol Micros: THGTG12n60c3d

109360

THGTG12n60c3d

Contractor Symbol:

Case : TO247

Datasheet

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24A; 600V; 104W; IGBT w/ Diode

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Parameters

Gate charge:	71nC
Max. dissipated power:	104W
Max. collector current:	24A
Max collector current (impulse):	96A
Forvard volatge [Vgeth]:	3,0V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	71nC
Max. dissipated power:	104W
Max. collector current:	24A
Max collector current (impulse):	96A
Forvard volatge [Vgeth]:	3,0V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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