HGTG20N60A4

Symbol Micros: THGTG20N60A4

29913

THGTG20N60A4

Contractor Symbol:

Case : TO247

Datasheet

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70A; 600V; 290W; IGBT

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Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max. collector current:	70A
Max collector current (impulse):	280A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max. collector current:	70A
Max collector current (impulse):	280A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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