HGTG20N60A4D

Symbol Micros: THGTG20n60a4d

109358

THGTG20n60a4d

Contractor Symbol:

Case : TO247

Datasheet

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70A; 600V; 290W; IGBT w/ Diode

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Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max. collector current:	70A
Max collector current (impulse):	280A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG20N60A4D Case style: TO247  

External warehouse:

3190 pcs.

Quantity of pcs.	30+ (Inappropriate quantity? Ask for a different one).
Net price (EUR)	0,9303

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max. collector current:	70A
Max collector current (impulse):	280A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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