HGTG20N60B3D

Symbol Micros: THGTG20n60b3d

109359

THGTG20n60b3d

Contractor Symbol:

Case : TO247

Datasheet

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40A; 600V; 165W; IGBT w/ Diode

Parameters

Gate charge:	135nC
Max. dissipated power:	165W
Max. collector current:	40A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	3,0V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR

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• Parameters

Gate charge:	135nC
Max. dissipated power:	165W
Max. collector current:	40A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	3,0V ~ 6,0V
Case:	TO247
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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