HGTG30N60B3D
Symbol Micros:
THGTG30n60b3d
Case : TO247
60A; 600V; 208W; IGBT w/ Diode
Any questions? We will be happy to answer.
Write sales@micros.com.pl or call: +48 785 054 437
Write sales@micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 250nC |
Max. dissipated power: | 208W |
Max. collector current: | 60A |
Max collector current (impulse): | 220A |
Forvard volatge [Vgeth]: | 4,2V ~ 6,0V |
Case: | TO247 |
Manufacturer: | ON SEMICONDUCTOR |
Gate charge: | 250nC |
Max. dissipated power: | 208W |
Max. collector current: | 60A |
Max collector current (impulse): | 220A |
Forvard volatge [Vgeth]: | 4,2V ~ 6,0V |
Case: | TO247 |
Manufacturer: | ON SEMICONDUCTOR |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |