HGTG30N60B3D

Symbol Micros: THGTG30n60b3d
Case : TO247
60A; 600V; 208W; IGBT w/ Diode
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Parameters
Gate charge: 250nC
Max. dissipated power: 208W
Max. collector current: 60A
Max collector current (impulse): 220A
Forvard volatge [Vgeth]: 4,2V ~ 6,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
         
 
Item available on request
Gate charge: 250nC
Max. dissipated power: 208W
Max. collector current: 60A
Max collector current (impulse): 220A
Forvard volatge [Vgeth]: 4,2V ~ 6,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT