HGTG40N60A4

Symbol Micros: THGTG40n60a4
Contractor Symbol:
Case : TO247
Trans IGBT Chip N-CH 600V 75A 625000mW 3-Pin(3+Tab) TO-247
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Parameters
Gate charge: 520nC
Max. dissipated power: 625W
Max. collector current: 75A
Max collector current (impulse): 300A
Forvard volatge [Vgeth]: 4,5V ~ 7,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG40N60A4 RoHS Case style: TO247  
In stock:
19 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 10,5132 9,0340 8,1115 7,6307 7,3524
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Packaging:
30
Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG40N60A4 Case style: TO247  
External warehouse:
300 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 7,3524
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: HGTG40N60A4 Case style: TO247  
External warehouse:
60 pcs.
Quantity of pcs. 30+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 7,3524
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 520nC
Max. dissipated power: 625W
Max. collector current: 75A
Max collector current (impulse): 300A
Forvard volatge [Vgeth]: 4,5V ~ 7,0V
Case: TO247
Manufacturer: ON SEMICONDUCTOR
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT