HGTP12N60A4D

Symbol Micros: THGTP12n60a4d

52597

THGTP12n60a4d

Contractor Symbol:

Case : TO220

Datasheet

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54A; 600V; 167W; IGBT w/ Diode

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Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max. collector current:	54A
Max collector current (impulse):	96A
Forvard volatge [Vgeth]:	5,6V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR

All parameters

         

 

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• Parameters

Gate charge:	120nC
Max. dissipated power:	167W
Max. collector current:	54A
Max collector current (impulse):	96A
Forvard volatge [Vgeth]:	5,6V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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