HGTP20N60A4

Symbol Micros: THGTP20n60a4

78829

THGTP20n60a4

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 600V; 20V; 70A; 280A; 290W; 4,5V~7,0V; 210nC; -55°C~150°C;

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Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max. collector current:	70A
Max collector current (impulse):	280A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR

All parameters

Manufacturer:: Fairchild Manufacturer part number: HGTP20N60A4 RoHS Case style: TO220  

In stock:

19 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	2,7271	2,3560	2,1376	1,9990	1,9473

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Gate charge:	210nC
Max. dissipated power:	290W
Max. collector current:	70A
Max collector current (impulse):	280A
Forvard volatge [Vgeth]:	4,5V ~ 7,0V
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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