HGTP20N60A4
Symbol Micros:
THGTP20n60a4
Case : TO220
70A; 600V; 290W; IGBT
Parameters
| Gate charge: | 210nC |
| Max. dissipated power: | 290W |
| Max. collector current: | 70A |
| Max collector current (impulse): | 280A |
| Forvard volatge [Vgeth]: | 4,5V ~ 7,0V |
| Case: | TO220 |
| Manufacturer: | ON SEMICONDUCTOR |
Manufacturer:: Fairchild
Manufacturer part number: HGTP20N60A4 RoHS
Case style: TO220
In stock:
49 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 2,5830 | 2,1650 | 1,9255 | 1,7752 | 1,7212 |
| Gate charge: | 210nC |
| Max. dissipated power: | 290W |
| Max. collector current: | 70A |
| Max collector current (impulse): | 280A |
| Forvard volatge [Vgeth]: | 4,5V ~ 7,0V |
| Case: | TO220 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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