HY3906P HUAYI

Symbol Micros: THY3906p
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Case : TO220
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Transistor N-Channel MOSFET; 60V; 25V; 190A; 4mOhm; 220W; -55°C ~ 175°C; Similar to: IRFB3306PBF; IRFB3306GPBF;
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Parameters
Open channel resistance: 4mOhm
Max. drain current: 190A
Max. power loss: 220W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HY3906P RoHS Case style: TO220 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2664 0,9650 0,7991 0,7010 0,6659
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Packaging:
50
Open channel resistance: 4mOhm
Max. drain current: 190A
Max. power loss: 220W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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