HY3906P HUAYI

Symbol Micros: THY3906p

401179

THY3906p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 60V; 25V; 190A; 4mOhm; 220W; -55°C ~ 175°C; Similar to: IRFB3306PBF; IRFB3306GPBF;

Parameters

Open channel resistance:	4mOhm
Max. drain current:	190A
Max. power loss:	220W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HY3906P RoHS Case style: TO220 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2657	0,9644	0,7986	0,7006	0,6655

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4mOhm
Max. drain current:	190A
Max. power loss:	220W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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