HYG013N03LS1C2 HUAYI

Symbol Micros: THYG013n03ls1c2

401230

THYG013n03ls1c2

Contractor Symbol:

Case : PDFN08(6x5)

Datasheet

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Transistor N-Channel MOSFET; 30V; 20V; 150A; 2,8mOhm; 65W; -55°C ~ 175°C;

Parameters

Open channel resistance:	2,8mOhm
Max. drain current:	150A
Max. power loss:	65W
Case:	PDFN08(6x5)
Manufacturer:	HUAYI
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG013N03LS1C2 RoHS Case style: DFN08(6x5) Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6936	0,4343	0,3620	0,3223	0,3012

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,8mOhm
Max. drain current:	150A
Max. power loss:	65W
Case:	PDFN08(6x5)
Manufacturer:	HUAYI
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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