HYG013N03LS1C2 HUAYI

Symbol Micros: THYG013n03ls1c2
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Case : PDFN08(6x5)
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Transistor N-Channel MOSFET; 30V; 20V; 150A; 2,8mOhm; 65W; -55°C ~ 175°C;
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Parameters
Open channel resistance: 2,8mOhm
Max. drain current: 150A
Max. power loss: 65W
Case: PDFN08(6x5)
Manufacturer: HUAYI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG013N03LS1C2 RoHS Case style: DFN08(6x5) Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6940 0,4346 0,3622 0,3225 0,3014
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Packaging:
100
Open channel resistance: 2,8mOhm
Max. drain current: 150A
Max. power loss: 65W
Case: PDFN08(6x5)
Manufacturer: HUAYI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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