HYG020N04NR1P HUAYI

Symbol Micros: THYG020n04nr1p

401271

THYG020n04nr1p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 40V; 25V; 220A; 2,4mOhm; 200W; -55°C ~ 175°C;

Parameters

Open channel resistance:	2,4mOhm
Max. drain current:	200A
Max. power loss:	200W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG020N04NR1P RoHS Case style: TO220 Datasheet

In stock:

80 pcs.

Quantity of pcs.	1+	5+	50+	100+	500+
Net price (EUR)	1,1232	0,7473	0,5768	0,5581	0,5348

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,4mOhm
Max. drain current:	200A
Max. power loss:	200W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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