HYG028N10NS1P HUAYI

Symbol Micros: THYG028n10ns1p

401319

THYG028n10ns1p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 230A; 3,3mOhm; 300W; -55°C ~ 175°C;

Parameters

Open channel resistance:	3,3mOhm
Max. drain current:	230A
Max. power loss:	300W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG028N10NS1P RoHS Case style: TO220 Datasheet

In stock:

40 pcs.

Quantity of pcs.	1+	5+	20+	50+	200+
Net price (EUR)	1,6557	1,2236	1,0672	1,0158	0,9738

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Packaging:
20/50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3,3mOhm
Max. drain current:	230A
Max. power loss:	300W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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