HYG038N03LR1C2 HUAYI

Symbol Micros: THYG038n03lr1c2
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Case : PDFN08(6x5)
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Transistor N-Channel MOSFET; 30V; 20V; 84A; 6,6mOhm; 53W; -55°C ~ 175°C;
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Parameters
Open channel resistance: 6,6mOhm
Max. drain current: 84A
Max. power loss: 53W
Case: PDFN08(6x5)
Manufacturer: HUAYI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG038N03LR1C2 RoHS Case style: DFN08(6x5) Datasheet
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,2827 0,1799 0,1262 0,1096 0,1026
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Packaging:
200
Open channel resistance: 6,6mOhm
Max. drain current: 84A
Max. power loss: 53W
Case: PDFN08(6x5)
Manufacturer: HUAYI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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