HYG043N10NS2B HUAYI

Symbol Micros: THYG043n10ns2b

502355

THYG043n10ns2b

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 100V; 20V; 164A; 4,8mOhm; 258,6W; -55°C ~ 175°C;

Parameters

Open channel resistance:	4,8mOhm
Max. drain current:	164A
Max. power loss:	258,6W
Case:	TO263 (D2PAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG043N10NS2B RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,0882	0,7239	0,6001	0,5394	0,5184

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,8mOhm
Max. drain current:	164A
Max. power loss:	258,6W
Case:	TO263 (D2PAK)
Manufacturer:	HUAYI
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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