HYG060N08NS1P HUAYI

Symbol Micros: THYG060n08ns1p
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Case : TO220
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Transistor N-Channel MOSFET; 80V; 20V; 105A; 6mOhm; 125W; -55°C ~ 175°C;
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Parameters
Open channel resistance: 6mOhm
Max. drain current: 105A
Max. power loss: 125W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 80V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG060N08NS1P RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2080 0,8856 0,7103 0,6099 0,5748
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Packaging:
50
Open channel resistance: 6mOhm
Max. drain current: 105A
Max. power loss: 125W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 80V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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